SEMICONDUCTOR VAPOR ETCHING DEVICE WITH INTERMEDIATE CHAMBER

SEMICONDUCTOR VAPOR ETCHING DEVICE WITH INTERMEDIATE CHAMBER

A semiconductor vapor etching device is disclosed. The device can include an intermediate chamber between a vapor source and a reaction chamber. Etch reactant vapor can be pulsed from the intermediate chamber to the reaction chamber to etch a substrate.

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Bibliographische Detailangaben
Hauptverfasser: Sharma, Varun, Blomberg, Tom E
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor vapor etching device is disclosed. The device can include an intermediate chamber between a vapor source and a reaction chamber. Etch reactant vapor can be pulsed from the intermediate chamber to the reaction chamber to etch a substrate.