SAMPLING CIRCUIT

A sampling circuit includes a metal oxide semiconductor (MOS) transistor that includes a third metallization receiving a reference voltage between a first metallization coupled to a source region of the transistor and a second metallization coupled to a drain region of the transistor.

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Bibliographische Detailangaben
Hauptverfasser: Duperray, David, Blanc, Jean-Pierre, Le Tual, Stéphane
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A sampling circuit includes a metal oxide semiconductor (MOS) transistor that includes a third metallization receiving a reference voltage between a first metallization coupled to a source region of the transistor and a second metallization coupled to a drain region of the transistor.