SAMPLING CIRCUIT
A sampling circuit includes a metal oxide semiconductor (MOS) transistor that includes a third metallization receiving a reference voltage between a first metallization coupled to a source region of the transistor and a second metallization coupled to a drain region of the transistor.
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Format: | Patent |
Sprache: | eng |
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Zusammenfassung: | A sampling circuit includes a metal oxide semiconductor (MOS) transistor that includes a third metallization receiving a reference voltage between a first metallization coupled to a source region of the transistor and a second metallization coupled to a drain region of the transistor. |
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