METHOD FOR FORMING AN ALUMINUM NITRIDE LAYER

A method for forming an aluminum nitride layer (310, 320) comprises the provision of a substrate (100) and the forming of a patterned metal nitride layer (110). A bottom electrode metal layer (210) is formed on the exposed portions (101) of the substrate. An aluminum nitride layer portion (320) grow...

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Bibliographische Detailangaben
Hauptverfasser:	CERANSKI, Christian, SCHIEK, Maximilian, SCHEINBACHER, Günter
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRONIC CIRCUITRY ELECTRICITY IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS RESONATORS
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Beschreibung
Zusammenfassung:	A method for forming an aluminum nitride layer (310, 320) comprises the provision of a substrate (100) and the forming of a patterned metal nitride layer (110). A bottom electrode metal layer (210) is formed on the exposed portions (101) of the substrate. An aluminum nitride layer portion (320) grown above the exposed portion (101) of the substrate (100) exhibits piezoelectric properties. An aluminum nitride layer portion (310) grown above the patterned metal nitride layer (110) exhibits no piezoelectric properties (310). Both aluminum nitride layer portions (320, 310) are grown simultaneously.