DISPLAY APPARATUS

A display apparatus including a first thin-film transistor, a second thin-film transistor and a third thin-film transistor is provided. The first thin-film transistor includes a first active layer composed of a polysilicon material, a first gate electrode overlapping the first active layer such that...

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Hauptverfasser: KIM, Byeong-Keun, LEE, Kyoung-Soo, MOON, Sung-Ho, ROH, Jin-Kyu, SON, Won-Ho, CHO, Seong-Pil, LEE, Sang-Gul, KWON, Ki-Hyun, KIM, Chan-Ho, CHOI, Kye-Chul, SON, Kyung-Mo, KIM, Dong-Yup, JUNG, Hee-Jin, JEONG, Hyun-Gyo, NOH, Sang-Soon, KIM, Jang-Dae, KANG, Yong-Bin, LEE, Jun-Seuk, JIN, Jung-Doo
Format: Patent
Sprache:eng
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Zusammenfassung:A display apparatus including a first thin-film transistor, a second thin-film transistor and a third thin-film transistor is provided. The first thin-film transistor includes a first active layer composed of a polysilicon material, a first gate electrode overlapping the first active layer such that a first gate insulating layer is interposed therebetween, a first source electrode and a first drain electrode. The first gate electrode includes n layers. The first source electrode and the first drain electrode are connected to the first active layer. The second thin-film transistor includes a second active layer composed of a polysilicon material, a second gate electrode overlapping the second active layer such that a first gate insulating layer is interposed therebetween, a second source electrode and a second drain electrode. The second gate electrode includes n+1 layers. The second source electrode and the second drain electrode are connected to the second active layer.