FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE WITH CAPPING LAYER AND METHOD FOR FORMING THE SAME

FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE WITH CAPPING LAYER AND METHOD FOR FORMING THE SAME

A FinFET device structure is provided. The FinFET device structure includes a first gate structure formed over a fin structure, and a conductive layer formed over the first gate structure. The FinFET device structure includes a first capping layer formed over the conductive layer, and a top surface...

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Bibliographische Detailangaben
Hauptverfasser: WANG, Mei-Yun, CHEN, Chun-Han, LEE, Chen-Ming, YANG, Fu-Kai, LI, Jr-Hung, LU, Bo-Cyuan
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A FinFET device structure is provided. The FinFET device structure includes a first gate structure formed over a fin structure, and a conductive layer formed over the first gate structure. The FinFET device structure includes a first capping layer formed over the conductive layer, and a top surface of the conductive layer is in direct contact with a bottom surface of the first capping layer.