PROCESS FLOW FOR FABRICATION OF CAP METAL OVER TOP METAL WITH SINTER BEFORE PROTECTIVE DIELECTRIC ETCH

PROCESS FLOW FOR FABRICATION OF CAP METAL OVER TOP METAL WITH SINTER BEFORE PROTECTIVE DIELECTRIC ETCH

A method of forming a semiconductor device for improving an electrical connection. The semiconductor device includes a top metal layer. A protective dielectric layer is formed over the top metal layer. A sintering operation is performed while the top metal layer is covered by the protective dielectr...

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Bibliographische Detailangaben
Hauptverfasser: Faust, Richard Allen, Lavangkul, Sudtida, Kulkarni, Anagha Shashishekhar, Higgins, Robert Martin, Davis, Jonathan Philip, Burnett, Andrew Frank
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method of forming a semiconductor device for improving an electrical connection. The semiconductor device includes a top metal layer. A protective dielectric layer is formed over the top metal layer. A sintering operation is performed while the top metal layer is covered by the protective dielectric layer. After the sintering operation, the protective dielectric layer is patterned to expose areas on the top metal layer for bond pads of the semiconductor device. A bond pad cap is formed on the top metal layer where exposed by the protective dielectric layer.