THERMAL ALD OF METAL OXIDE USING ISSG

A method of forming a metal oxide is disclosed herein. The methods are performed by atomic layer deposition without the use of plasma. The methods utilize a heated substrate exposed to a co-flow of H2 and O2 to form radical species which react with metal precursors to form metal oxides.

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Bibliographische Detailangaben
1. Verfasser:	Sato, Tatsuya E
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A method of forming a metal oxide is disclosed herein. The methods are performed by atomic layer deposition without the use of plasma. The methods utilize a heated substrate exposed to a co-flow of H2 and O2 to form radical species which react with metal precursors to form metal oxides.