CHANNEL FORMATION FOR THREE DIMENSIONAL TRANSISTORS

CHANNEL FORMATION FOR THREE DIMENSIONAL TRANSISTORS

Embodiments herein describe techniques for a transistor above a substrate. The transistor includes a channel layer above the substrate. The channel layer includes a first channel material of a first conductivity. In addition, the channel layer further includes elements of one or more additional mate...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: MITAN, Martin M, SELL, Bernhard, WANG, Pei-Hua, PIPES, Leonard C, KU, Chieh-Jen
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Embodiments herein describe techniques for a transistor above a substrate. The transistor includes a channel layer above the substrate. The channel layer includes a first channel material of a first conductivity. In addition, the channel layer further includes elements of one or more additional materials distributed within the channel layer. The channel layer including the elements of the one or more additional materials has a second conductivity different from the first conductivity. Other embodiments may be described and/or claimed.