SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

A semiconductor device including a buried insulating layer on a substrate; a lower semiconductor layer on the buried insulating layer, the lower semiconductor layer including a first material; a channel pattern on the lower semiconductor layer, the channel pattern being spaced apart from the lower s...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: BAE, Geum Jong, BAE, Dong Il, NOH, Chang Woo
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor device including a buried insulating layer on a substrate; a lower semiconductor layer on the buried insulating layer, the lower semiconductor layer including a first material; a channel pattern on the lower semiconductor layer, the channel pattern being spaced apart from the lower semiconductor layer and including a second material different from the first material; and a gate electrode surrounding at least a portion of the channel pattern.