CHEMICAL MECHANICAL POLISHING METHOD

CHEMICAL MECHANICAL POLISHING METHOD

A planarization method and a CMP method are provided. The planarization method includes providing a substrate with a first region and a second region having different degrees of hydrophobicity or hydrophilicity and performing a surface treatment to the first region to render the degrees of hydrophob...

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Bibliographische Detailangaben
Hauptverfasser: CHEN, TUNG-KAI, HO, HSIN-YING, CHEN, KEI-WEI, CHANG, CHIHIEH, LIAO, KAO-FENG, HUANG, HUII, TSAI, CHING-HSIANG, KUNG, CHUN-HAO, CHIH, FANG-I, HSU, CHIA-JUNG
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A planarization method and a CMP method are provided. The planarization method includes providing a substrate with a first region and a second region having different degrees of hydrophobicity or hydrophilicity and performing a surface treatment to the first region to render the degrees of hydrophobicity or hydrophilicity in proximity to that of the second region. The CMP method includes providing a substrate with a first region and a second region; providing a polishing slurry on the substrate, wherein the polishing slurry and the surface of the first region have a first contact angle, and the polishing slurry and the surface of the first region have a second contact angle; modifying the surface of the first region to make a contact angle difference between the first contact angle and the second contact angle equal to or less than 30 degrees.