Magnetic Tunnel Junction with Low Defect Rate after High Temperature Anneal for Magnetic Device Applications

A magnetic tunnel junction is disclosed wherein the reference layer and free layer each comprise one layer having a boron content from 25 to 50 atomic %, and an adjoining second layer with a boron content from 1 to 20 atomic %. One of the first and second layers in each of the free layer and referen...

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Bibliographische Detailangaben
Hauptverfasser:	Lee, Yuan-Jen, Zhu, Jian, Wang, Po-Kang, Jan, Guenole, Liu, Huanlong
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRICITY INDUCTANCES INFORMATION STORAGE MAGNETS PHYSICS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES STATIC STORES TRANSFORMERS
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Beschreibung
Zusammenfassung:	A magnetic tunnel junction is disclosed wherein the reference layer and free layer each comprise one layer having a boron content from 25 to 50 atomic %, and an adjoining second layer with a boron content from 1 to 20 atomic %. One of the first and second layers in each of the free layer and reference layer contacts the tunnel barrier. Each boron containing layer has a thickness of 1 to 10 Angstroms and may include one or more B layers and one or more Co, Fe, CoFe, or CoFeB layers. As a result, migration of non-magnetic metals along crystalline boundaries to the tunnel barrier is prevented, and the MTJ has a low defect count of around 10 ppm while maintaining an acceptable TMR ratio following annealing to temperatures of about 400° C. The boron containing layers are selected from CoB, FeB, CoFeB and alloys thereof including CoFeNiB.