REDUCING GATE INDUCED DRAIN LEAKAGE IN DRAM WORDLINE

REDUCING GATE INDUCED DRAIN LEAKAGE IN DRAM WORDLINE

Memory devices and methods of forming memory devices are described. The memory devices comprise two work-function metal layers, where one work-function layer has a lower work-function than the other work-function layer. The low work-function layer may reduce gate-induced drain leakage current losses...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Kang, Sung-Kwan, Lee, Gill Yong, Chen, Shih Chung, Anthis, Jeffrey W, Yu, Sang Ho
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Memory devices and methods of forming memory devices are described. The memory devices comprise two work-function metal layers, where one work-function layer has a lower work-function than the other work-function layer. The low work-function layer may reduce gate-induced drain leakage current losses. Methods of forming memory devices are also described.