SEMICONDUCTOR DEVICE INCLUDING A POROUS DIELECTRIC LAYER, AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE

A semiconductor device includes a porous dielectric layer including a recessed portion, a conductive layer formed in the recessed portion, and a cap layer formed on the porous dielectric layer and on the conductive layer in the recessed portion, an upper surface of the porous dielectric layer being...

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Bibliographische Detailangaben
Hauptverfasser: Briggs, Benjamin David, Clevenger, Lawrence A, Deprospo, Bartlet H, Rizzolo, Michael, Penny, Christopher J, Huang, Huai
Format: Patent
Sprache:eng
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Zusammenfassung:A semiconductor device includes a porous dielectric layer including a recessed portion, a conductive layer formed in the recessed portion, and a cap layer formed on the porous dielectric layer and on the conductive layer in the recessed portion, an upper surface of the porous dielectric layer being exposed through a gap in the cap layer.