MAGNETIC RANDOM ACCESS MEMORY STRUCTURE AND MANUFACTURING METHOD OF THE SAME

MAGNETIC RANDOM ACCESS MEMORY STRUCTURE AND MANUFACTURING METHOD OF THE SAME

The present disclosure provides a method for manufacturing a magnetic random access memory (MRAM) structure, including forming a magnetic tunneling junction (MTJ) structure in a first region, forming a dielectric stack over the first region and a second region different from the first region, etchin...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: CHUANG, HARRY-HAK-LAY, CHEN, SHENGANG
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Beschreibung
Zusammenfassung:The present disclosure provides a method for manufacturing a magnetic random access memory (MRAM) structure, including forming a magnetic tunneling junction (MTJ) structure in a first region, forming a dielectric stack over the first region and a second region different from the first region, etching an upper portion of the dielectric stack in the first region and the second region, and performing a planarization operation over the remaining portion of the dielectric stack in the first region and the second region.