PLASMA CONTROL APPARATUS AND PLASMA PROCESSING SYSTEM INCLUDING THE SAME

A plasma control apparatus for controlling plasma to be uniformly distributed in a plasma chamber and a plasma processing system including the same are provided. The plasma control apparatus includes a transmission line configured to deliver radio frequency (RF) power to a plasma chamber through at...

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Bibliographische Detailangaben
Hauptverfasser: HUR, Minyoung, KIM, Hyosin, SUNG, Dougyong, JIN, Hadong, SHIM, Seungbo, NA, Donghyeon
Format: Patent
Sprache:eng
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Zusammenfassung:A plasma control apparatus for controlling plasma to be uniformly distributed in a plasma chamber and a plasma processing system including the same are provided. The plasma control apparatus includes a transmission line configured to deliver radio frequency (RF) power to a plasma chamber through at least two frequencies, a matching circuit configured to control impedance for maximum delivery of the RF power, and a plasma control circuit configured to selectively and independently control harmonics at a very high frequency (VHF) among the at least two frequencies and to control plasma distribution in the plasma chamber by producing resonance for the harmonics.