Tungsten Sputtering Target And Method For Producing Same

According to one of various aspects of the present invention, a tungsten sputtering target has a purity of tungsten is 5 N (99.999% by weight) or more, and an impurity of carbon and an impurity of oxygen contained in tungsten are 50 ppm by weight or less, respectively, and an average grain size of t...

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Hauptverfasser: Nakasumi, Seiji, Dasai, Takafumi, Sogawa, Shinji
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creator Nakasumi, Seiji
Dasai, Takafumi
Sogawa, Shinji
description According to one of various aspects of the present invention, a tungsten sputtering target has a purity of tungsten is 5 N (99.999% by weight) or more, and an impurity of carbon and an impurity of oxygen contained in tungsten are 50 ppm by weight or less, respectively, and an average grain size of tungsten crystal is more than 100 μm.
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subjects ALLOYS
CASTING
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
FERROUS OR NON-FERROUS ALLOYS
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
MAKING METALLIC POWDER
MANUFACTURE OF ARTICLES FROM METALLIC POWDER
METALLURGY
PERFORMING OPERATIONS
POWDER METALLURGY
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
TRANSPORTING
TREATMENT OF ALLOYS OR NON-FERROUS METALS
WORKING METALLIC POWDER
title Tungsten Sputtering Target And Method For Producing Same
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