Tungsten Sputtering Target And Method For Producing Same

According to one of various aspects of the present invention, a tungsten sputtering target has a purity of tungsten is 5 N (99.999% by weight) or more, and an impurity of carbon and an impurity of oxygen contained in tungsten are 50 ppm by weight or less, respectively, and an average grain size of t...

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Bibliographische Detailangaben
Hauptverfasser:	Nakasumi, Seiji, Dasai, Takafumi, Sogawa, Shinji
Format:	Patent
Sprache:	eng
Schlagworte:	ALLOYS CASTING CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL FERROUS OR NON-FERROUS ALLOYS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MAKING METALLIC POWDER MANUFACTURE OF ARTICLES FROM METALLIC POWDER METALLURGY PERFORMING OPERATIONS POWDER METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING TREATMENT OF ALLOYS OR NON-FERROUS METALS WORKING METALLIC POWDER
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Beschreibung
Zusammenfassung:	According to one of various aspects of the present invention, a tungsten sputtering target has a purity of tungsten is 5 N (99.999% by weight) or more, and an impurity of carbon and an impurity of oxygen contained in tungsten are 50 ppm by weight or less, respectively, and an average grain size of tungsten crystal is more than 100 μm.