HIGH Q BULK ACOUSTIC RESONATOR WITH DIELECTRIC FLAPS

HIGH Q BULK ACOUSTIC RESONATOR WITH DIELECTRIC FLAPS

A high Q acoustic BAW resonator with high coupling and improved spurious mode suppression is given. The BAW resonator comprises an active resonator region (AR) formed by an overlap of the three layers bottom electrode (BE), piezoelectric layer (PL) and top electrode layer (TE). An inner-flap (IF) is...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: SHIRAKAWA, Alexandre Augusto, POLLARD, Thomas
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS
RESONATORS
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Beschreibung
Zusammenfassung:A high Q acoustic BAW resonator with high coupling and improved spurious mode suppression is given. The BAW resonator comprises an active resonator region (AR) formed by an overlap of the three layers bottom electrode (BE), piezoelectric layer (PL) and top electrode layer (TE). An inner-flap (IF) is formed by a dielectric 3D structure sitting on a marginal region (MR) of the active resonator region (AR) or adjacent thereto, extending inwardly towards the center thereof and having a section that runs in parallel and distant to the top surface of the resonator keeping an inner gap (IG) thereto or an angle Θ.