SPECTROSCOPIC FOCAL PLANE ARRAY AND METHOD OF MAKING SAME

A semiconductor material emitting device is positioned such that its output flux impinges on a substrate at a non-perpendicular angle, so as to grow a first epilayer which is linearly graded in the direction perpendicular to the growth direction. The linear grading can be arranged such that, for exa...

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Bibliographische Detailangaben
1. Verfasser:	Zandian, Majid
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COLORIMETRY DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC COMMUNICATION TECHNIQUE ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT MEASURING METALLURGY PHYSICS PICTORIAL COMMUNICATION, e.g. TELEVISION RADIATION PYROMETRY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TESTING
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Beschreibung
Zusammenfassung:	A semiconductor material emitting device is positioned such that its output flux impinges on a substrate at a non-perpendicular angle, so as to grow a first epilayer which is linearly graded in the direction perpendicular to the growth direction. The linear grading can be arranged such that, for example, each row of pixels has a different cutoff wavelength, thereby making it possible to provide a spectroscopic FPA without the use of filters. The non-perpendicular angle and/or the flux intensity can be adjusted to achieve a desired compositional grading. A spectral ellipsometer may be used to monitor the composition of the epilayer during the fabrication process, and to control the intensity of the flux.