METHOD OF MANUFACTURING THIN FILM TRANSISTOR, METHOD OF MANUFACTURING DISPLAY APPARATUS AND THIN FILM TRANSISTOR SUBSTRATE
A method of manufacturing a thin film transistor includes: forming an active pattern on a substrate; forming an insulating layer and a gate electrode layer on the active pattern in order; forming a photoresist pattern on the gate electrode layer; forming a preliminary gate electrode by wet etching t...
Gespeichert in:
| Hauptverfasser: | , , , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | YOON, Kap Soo KIM, Joongeol LEE, Woo Geun CHOI, Seung-Ha HONG, Jiyun LEE, Keum Hee |
| description | A method of manufacturing a thin film transistor includes: forming an active pattern on a substrate; forming an insulating layer and a gate electrode layer on the active pattern in order; forming a photoresist pattern on the gate electrode layer; forming a preliminary gate electrode by wet etching the gate electrode layer using the photoresist pattern; forming an insulating pattern by dry etching the insulating layer using the photoresist pattern and the preliminary gate electrode; and forming a gate electrode by wet etching a side surface of the preliminary gate electrode using the photoresist pattern. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2020358040A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2020358040A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2020358040A13</originalsourceid><addsrcrecordid>eNrjZKjydQ3x8HdR8HdT8HX0C3VzdA4JDfL0c1cI8fD0U3Dz9PFVCAly9Av2DA7xD9JRwKXaxTM4wMcxUsExIMAxyDEkNFjB0c8FqxkKwaFOwUBuiCsPA2taYk5xKi-U5mZQdnMNcfbQTS3Ij08tLkhMTs1LLYkPDTYyMDIwNrUwMDFwNDQmThUAL0s75A</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD OF MANUFACTURING THIN FILM TRANSISTOR, METHOD OF MANUFACTURING DISPLAY APPARATUS AND THIN FILM TRANSISTOR SUBSTRATE</title><source>esp@cenet</source><creator>YOON, Kap Soo ; KIM, Joongeol ; LEE, Woo Geun ; CHOI, Seung-Ha ; HONG, Jiyun ; LEE, Keum Hee</creator><creatorcontrib>YOON, Kap Soo ; KIM, Joongeol ; LEE, Woo Geun ; CHOI, Seung-Ha ; HONG, Jiyun ; LEE, Keum Hee</creatorcontrib><description>A method of manufacturing a thin film transistor includes: forming an active pattern on a substrate; forming an insulating layer and a gate electrode layer on the active pattern in order; forming a photoresist pattern on the gate electrode layer; forming a preliminary gate electrode by wet etching the gate electrode layer using the photoresist pattern; forming an insulating pattern by dry etching the insulating layer using the photoresist pattern and the preliminary gate electrode; and forming a gate electrode by wet etching a side surface of the preliminary gate electrode using the photoresist pattern.</description><language>eng</language><subject>ELECTRICITY</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20201112&DB=EPODOC&CC=US&NR=2020358040A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20201112&DB=EPODOC&CC=US&NR=2020358040A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YOON, Kap Soo</creatorcontrib><creatorcontrib>KIM, Joongeol</creatorcontrib><creatorcontrib>LEE, Woo Geun</creatorcontrib><creatorcontrib>CHOI, Seung-Ha</creatorcontrib><creatorcontrib>HONG, Jiyun</creatorcontrib><creatorcontrib>LEE, Keum Hee</creatorcontrib><title>METHOD OF MANUFACTURING THIN FILM TRANSISTOR, METHOD OF MANUFACTURING DISPLAY APPARATUS AND THIN FILM TRANSISTOR SUBSTRATE</title><description>A method of manufacturing a thin film transistor includes: forming an active pattern on a substrate; forming an insulating layer and a gate electrode layer on the active pattern in order; forming a photoresist pattern on the gate electrode layer; forming a preliminary gate electrode by wet etching the gate electrode layer using the photoresist pattern; forming an insulating pattern by dry etching the insulating layer using the photoresist pattern and the preliminary gate electrode; and forming a gate electrode by wet etching a side surface of the preliminary gate electrode using the photoresist pattern.</description><subject>ELECTRICITY</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZKjydQ3x8HdR8HdT8HX0C3VzdA4JDfL0c1cI8fD0U3Dz9PFVCAly9Av2DA7xD9JRwKXaxTM4wMcxUsExIMAxyDEkNFjB0c8FqxkKwaFOwUBuiCsPA2taYk5xKi-U5mZQdnMNcfbQTS3Ij08tLkhMTs1LLYkPDTYyMDIwNrUwMDFwNDQmThUAL0s75A</recordid><startdate>20201112</startdate><enddate>20201112</enddate><creator>YOON, Kap Soo</creator><creator>KIM, Joongeol</creator><creator>LEE, Woo Geun</creator><creator>CHOI, Seung-Ha</creator><creator>HONG, Jiyun</creator><creator>LEE, Keum Hee</creator><scope>EVB</scope></search><sort><creationdate>20201112</creationdate><title>METHOD OF MANUFACTURING THIN FILM TRANSISTOR, METHOD OF MANUFACTURING DISPLAY APPARATUS AND THIN FILM TRANSISTOR SUBSTRATE</title><author>YOON, Kap Soo ; KIM, Joongeol ; LEE, Woo Geun ; CHOI, Seung-Ha ; HONG, Jiyun ; LEE, Keum Hee</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2020358040A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2020</creationdate><topic>ELECTRICITY</topic><toplevel>online_resources</toplevel><creatorcontrib>YOON, Kap Soo</creatorcontrib><creatorcontrib>KIM, Joongeol</creatorcontrib><creatorcontrib>LEE, Woo Geun</creatorcontrib><creatorcontrib>CHOI, Seung-Ha</creatorcontrib><creatorcontrib>HONG, Jiyun</creatorcontrib><creatorcontrib>LEE, Keum Hee</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YOON, Kap Soo</au><au>KIM, Joongeol</au><au>LEE, Woo Geun</au><au>CHOI, Seung-Ha</au><au>HONG, Jiyun</au><au>LEE, Keum Hee</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD OF MANUFACTURING THIN FILM TRANSISTOR, METHOD OF MANUFACTURING DISPLAY APPARATUS AND THIN FILM TRANSISTOR SUBSTRATE</title><date>2020-11-12</date><risdate>2020</risdate><abstract>A method of manufacturing a thin film transistor includes: forming an active pattern on a substrate; forming an insulating layer and a gate electrode layer on the active pattern in order; forming a photoresist pattern on the gate electrode layer; forming a preliminary gate electrode by wet etching the gate electrode layer using the photoresist pattern; forming an insulating pattern by dry etching the insulating layer using the photoresist pattern and the preliminary gate electrode; and forming a gate electrode by wet etching a side surface of the preliminary gate electrode using the photoresist pattern.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_US2020358040A1 |
| source | esp@cenet |
| subjects | ELECTRICITY |
| title | METHOD OF MANUFACTURING THIN FILM TRANSISTOR, METHOD OF MANUFACTURING DISPLAY APPARATUS AND THIN FILM TRANSISTOR SUBSTRATE |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-13T11%3A24%3A50IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=YOON,%20Kap%20Soo&rft.date=2020-11-12&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2020358040A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |