SEED LAYERS FOR A NON-VOLATILE MEMORY ELEMENT

SEED LAYERS FOR A NON-VOLATILE MEMORY ELEMENT

Structures for a non-volatile memory element and methods of fabricating a structure for a non-volatile memory element. The structure includes a bottom electrode, a seed layer on the bottom electrode, and a magnetic-tunneling-junction layer stack on the seed layer. The seed layer is composed of a nic...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Yamane, Kazutaka, Otani, Yuichi, Rajan, Ganesh Kolliyil
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Structures for a non-volatile memory element and methods of fabricating a structure for a non-volatile memory element. The structure includes a bottom electrode, a seed layer on the bottom electrode, and a magnetic-tunneling-junction layer stack on the seed layer. The seed layer is composed of a nickel-chromium-ruthenium alloy including ruthenium in an amount ranging from seven atomic percent by weight to eighty-four atomic percent by weight.