SEMICONDUCTOR DEVICE PRODUCTION METHOD

A semiconductor device production method includes providing a first electrode and a second electrode on a rear surface of a substrate where an active region emitting light is formed and providing a laminated object formed of a material less brittle than the substrate at part of a region between the...

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Bibliographische Detailangaben
Hauptverfasser: YOSHINO, Tatsuro, NEGISHI, Masato, SUZUKI, Masato, YOSHIKAWA, Kenji
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A semiconductor device production method includes providing a first electrode and a second electrode on a rear surface of a substrate where an active region emitting light is formed and providing a laminated object formed of a material less brittle than the substrate at part of a region between the first electrode and the second electrode so as to position directly below the active region; and exposing a plane on which the active region appears by cleavage of the substrate together with the laminated object in a state where the laminated object is located directly above the active region.