IMAGE PICKUP DEVICE AND ELECTRONIC APPARATUS

The present technology relates to an image pickup device and electronic apparatus that enables suppression of dark current. There are included: a photoelectric conversion unit configured to perform a photoelectric conversion; a trench engraved in a semiconductor substrate; a negative fixed charge film having an oxide film, a nitrogen film, and an oxide film on a side wall of the trench; and an electrode film formed in the fixed charge film, oxide film configuring the fixed charge film includes silicon monoxide (SiO), and the nitrogen film includes silicon nitride (SiN). The nitrogen film configuring the fixed charge film can also include a polysilicon film or a high dielectric constant film (high-k film). The resent technology can be applied to, for example, a back-illuminated CMOS image sensor.