SINGLE-GATE MULTIPLE-TIME PROGRAMMING NON-VOLATILE MEMORY AND OPERATION METHOD THEREOF

A single-gate non-volatile memory and an operation method thereof are disclosed, wherein the non-volatile memory has a single floating gate. The non-volatile memory disposes a transistor and a capacitor structure in a semiconductor substrate. The transistor has two ion-doped regions disposed at two sides of a conduction gate to function as a source and a drain and disposed in the semiconductor substrate. The widths of the source and the drain are differently, and the edge of the drain is utilized to serve as a capacitor to control the floating gate. The minimum control voltages and elements during writing are involved to greatly reduce the area, control lines and the cost thereof.