SEMICONDUCTOR DEVICE INCLUDING GATE PATTERN AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE INCLUDING GATE PATTERN AND MANUFACTURING METHOD THEREOF

A semiconductor device may include: a dummy gate structure including a first gate pattern in which dummy gate lines extending in one direction are connected to each other on a substrate, and a second gate pattern in which dummy gate lines extending in the one direction are connected to each other on...

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Bibliographische Detailangaben
Hauptverfasser: SONG, Inhyun, KIM, Donghyun, SHIN, Taeyeon, PARK, Sejin, PARK, Juyun, BAEK, Jonghoon, JEONG, Sooyeon, JEON, Yeongmin
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor device may include: a dummy gate structure including a first gate pattern in which dummy gate lines extending in one direction are connected to each other on a substrate, and a second gate pattern in which dummy gate lines extending in the one direction are connected to each other on the same line with the first gate pattern; and a third gate pattern extending in parallel with the dummy gate structure on one side of the dummy gate structure.