SEMICONDUCTOR DEVICE

A semiconductor device includes a fin-type pattern extending in a first direction, a device isolation film surrounding the fin-type pattern, while exposing an upper portion of the fin-type pattern, a gate electrode extending on the device isolation film and the fin-type pattern in a second direction...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Song, Seung Hyun, Kim, Jong Chol, Chang, Kyu Baik, Kwon, Ui Hui, Jeong, Chang Wook, Kim, Yoon Suk, Kim, Yo Han
Format: Patent
Sprache:eng
Schlagworte:
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Beschreibung
Zusammenfassung:A semiconductor device includes a fin-type pattern extending in a first direction, a device isolation film surrounding the fin-type pattern, while exposing an upper portion of the fin-type pattern, a gate electrode extending on the device isolation film and the fin-type pattern in a second direction intersecting the first direction, a gate isolation film isolating the gate electrode in the second direction, and including a first material and on the device isolation film, an interlayer insulating film filling a side surface of the fin-type pattern and including a second material different from the first material.