Tapered Junction Shield for Self-Compensation of Asymmetry with Increasing Aspect Ratio for Tunneling Magneto-Resistance (TMR) Type Read Head

A junction shield (JS) structure is disclosed for providing longitudinal bias to a free layer (FL) having a width (FLW) and magnetization in a cross-track direction between sidewalls in a sensor. The sensor is formed between bottom and top shields and has sidewalls extending from a front side at an...

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Bibliographische Detailangaben
Hauptverfasser: Roy, Urmimala, Wu, Yan
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A junction shield (JS) structure is disclosed for providing longitudinal bias to a free layer (FL) having a width (FLW) and magnetization in a cross-track direction between sidewalls in a sensor. The sensor is formed between bottom and top shields and has sidewalls extending from a front side at an air bearing surface (ABS) to a backside that is a stripe height (SH) from the ABS. The JS structure has a single layer (JS1) adjacent to each sensor sidewall and with a magnetization parallel to that of the FL, and a tapered top surface such that JS1 has decreasing thickness with increasing height from the ABS. As aspect ratio or AR (SH/FLW) increases above 1, longitudinal bias increases proportionally to slow an increase in asymmetry as AR increases, and without introducing a loss in amplitude for a reader with low AR.