METHOD OF MAKING BIPOLAR TRANSISTOR

METHOD OF MAKING BIPOLAR TRANSISTOR

A bipolar transistor includes a substrate having a first well with a first dopant type; and a split collector region in the substrate, the split collector region including a highly doped central region having the first dopant type, and a lightly doped peripheral region having a second dopant type, o...

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Bibliographische Detailangaben
Hauptverfasser: SHEN, Chih-Heng, LIN, Long-Shih, YANG, Fu-Hsiung, CHU, Po-Tao, HUANG, Kun-Ming
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A bipolar transistor includes a substrate having a first well with a first dopant type; and a split collector region in the substrate, the split collector region including a highly doped central region having the first dopant type, and a lightly doped peripheral region having a second dopant type, opposite the first dopant type, wherein the lightly doped peripheral region surrounds the highly doped central region, a dopant concentration of the lightly doped peripheral region ranges from about 5×1012 ions/cm3 to about 5×1013 ions/cm3, and the lightly doped peripheral region has a same maximum depth as the highly doped central region.