FILM FORMING APPARATUS AND FILM FORMING METHOD

A film forming apparatus includes a high-frequency power supply capable of changing a frequency and a matcher for matching an internal impedance of the high-frequency power supply and a load impedance of a load including plasma. The matcher includes a capacitor having a fixed electrostatic capacitance and connected in series with the load. When the high-frequency power supply starts to supply a high-frequency power at a first frequency, the high-frequency power supply sweeps the frequency of the high-frequency power to be supplied such that reflected waves from the load are minimized. When it is determined that plasma is ignited, the high-frequency power supply changes the frequency of the high-frequency power to be supplied, from a second frequency at which plasma is ignited to a third frequency at which plasma is maintained, and instructs the matcher to perform an adjustment such that the reflected waves are minimized at the third frequency.