DEVICES COMPRISING CRYSTALLINE MATERIALS AND RELATED SYSTEMS
A method includes forming a semiconductor structure. The structure includes a first material, a blocking material, a second material in an amorphous form, and a third material in an amorphous form. The blocking material is disposed between the first material and the second material. At least the sec...
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creator | Nahar, Manuj Kinney, Wayne I Mutch, Michael |
description | A method includes forming a semiconductor structure. The structure includes a first material, a blocking material, a second material in an amorphous form, and a third material in an amorphous form. The blocking material is disposed between the first material and the second material. At least the second material and the third material each comprise silicon and/or germanium. The structure is exposed to a temperature above a crystallization temperature of the third material and below a crystallization temperature of the second material. Semiconductor structures, memory devices, and systems are also disclosed. |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2020303493A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2020303493A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2020303493A13</originalsourceid><addsrcrecordid>eNrjZLBxcQ3zdHYNVnD29w0I8gz29HNXcA6KDA5x9PHx9HNV8HUMcQ3ydPQJVnD0c1EIcvUB8l0UgoEKXH2DeRhY0xJzilN5oTQ3g7Kba4izh25qQX58anFBYnJqXmpJfGiwkYGRgbGBsYmlsaOhMXGqANAJKsE</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>DEVICES COMPRISING CRYSTALLINE MATERIALS AND RELATED SYSTEMS</title><source>esp@cenet</source><creator>Nahar, Manuj ; Kinney, Wayne I ; Mutch, Michael</creator><creatorcontrib>Nahar, Manuj ; Kinney, Wayne I ; Mutch, Michael</creatorcontrib><description>A method includes forming a semiconductor structure. The structure includes a first material, a blocking material, a second material in an amorphous form, and a third material in an amorphous form. The blocking material is disposed between the first material and the second material. At least the second material and the third material each comprise silicon and/or germanium. The structure is exposed to a temperature above a crystallization temperature of the third material and below a crystallization temperature of the second material. Semiconductor structures, memory devices, and systems are also disclosed.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200924&DB=EPODOC&CC=US&NR=2020303493A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25566,76549</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200924&DB=EPODOC&CC=US&NR=2020303493A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Nahar, Manuj</creatorcontrib><creatorcontrib>Kinney, Wayne I</creatorcontrib><creatorcontrib>Mutch, Michael</creatorcontrib><title>DEVICES COMPRISING CRYSTALLINE MATERIALS AND RELATED SYSTEMS</title><description>A method includes forming a semiconductor structure. The structure includes a first material, a blocking material, a second material in an amorphous form, and a third material in an amorphous form. The blocking material is disposed between the first material and the second material. At least the second material and the third material each comprise silicon and/or germanium. The structure is exposed to a temperature above a crystallization temperature of the third material and below a crystallization temperature of the second material. Semiconductor structures, memory devices, and systems are also disclosed.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLBxcQ3zdHYNVnD29w0I8gz29HNXcA6KDA5x9PHx9HNV8HUMcQ3ydPQJVnD0c1EIcvUB8l0UgoEKXH2DeRhY0xJzilN5oTQ3g7Kba4izh25qQX58anFBYnJqXmpJfGiwkYGRgbGBsYmlsaOhMXGqANAJKsE</recordid><startdate>20200924</startdate><enddate>20200924</enddate><creator>Nahar, Manuj</creator><creator>Kinney, Wayne I</creator><creator>Mutch, Michael</creator><scope>EVB</scope></search><sort><creationdate>20200924</creationdate><title>DEVICES COMPRISING CRYSTALLINE MATERIALS AND RELATED SYSTEMS</title><author>Nahar, Manuj ; Kinney, Wayne I ; Mutch, Michael</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2020303493A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2020</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Nahar, Manuj</creatorcontrib><creatorcontrib>Kinney, Wayne I</creatorcontrib><creatorcontrib>Mutch, Michael</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Nahar, Manuj</au><au>Kinney, Wayne I</au><au>Mutch, Michael</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>DEVICES COMPRISING CRYSTALLINE MATERIALS AND RELATED SYSTEMS</title><date>2020-09-24</date><risdate>2020</risdate><abstract>A method includes forming a semiconductor structure. The structure includes a first material, a blocking material, a second material in an amorphous form, and a third material in an amorphous form. The blocking material is disposed between the first material and the second material. At least the second material and the third material each comprise silicon and/or germanium. The structure is exposed to a temperature above a crystallization temperature of the third material and below a crystallization temperature of the second material. Semiconductor structures, memory devices, and systems are also disclosed.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | DEVICES COMPRISING CRYSTALLINE MATERIALS AND RELATED SYSTEMS |
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