DEVICES COMPRISING CRYSTALLINE MATERIALS AND RELATED SYSTEMS

A method includes forming a semiconductor structure. The structure includes a first material, a blocking material, a second material in an amorphous form, and a third material in an amorphous form. The blocking material is disposed between the first material and the second material. At least the sec...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Nahar, Manuj, Kinney, Wayne I, Mutch, Michael
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator Nahar, Manuj
Kinney, Wayne I
Mutch, Michael
description A method includes forming a semiconductor structure. The structure includes a first material, a blocking material, a second material in an amorphous form, and a third material in an amorphous form. The blocking material is disposed between the first material and the second material. At least the second material and the third material each comprise silicon and/or germanium. The structure is exposed to a temperature above a crystallization temperature of the third material and below a crystallization temperature of the second material. Semiconductor structures, memory devices, and systems are also disclosed.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2020303493A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2020303493A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2020303493A13</originalsourceid><addsrcrecordid>eNrjZLBxcQ3zdHYNVnD29w0I8gz29HNXcA6KDA5x9PHx9HNV8HUMcQ3ydPQJVnD0c1EIcvUB8l0UgoEKXH2DeRhY0xJzilN5oTQ3g7Kba4izh25qQX58anFBYnJqXmpJfGiwkYGRgbGBsYmlsaOhMXGqANAJKsE</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>DEVICES COMPRISING CRYSTALLINE MATERIALS AND RELATED SYSTEMS</title><source>esp@cenet</source><creator>Nahar, Manuj ; Kinney, Wayne I ; Mutch, Michael</creator><creatorcontrib>Nahar, Manuj ; Kinney, Wayne I ; Mutch, Michael</creatorcontrib><description>A method includes forming a semiconductor structure. The structure includes a first material, a blocking material, a second material in an amorphous form, and a third material in an amorphous form. The blocking material is disposed between the first material and the second material. At least the second material and the third material each comprise silicon and/or germanium. The structure is exposed to a temperature above a crystallization temperature of the third material and below a crystallization temperature of the second material. Semiconductor structures, memory devices, and systems are also disclosed.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20200924&amp;DB=EPODOC&amp;CC=US&amp;NR=2020303493A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25566,76549</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20200924&amp;DB=EPODOC&amp;CC=US&amp;NR=2020303493A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Nahar, Manuj</creatorcontrib><creatorcontrib>Kinney, Wayne I</creatorcontrib><creatorcontrib>Mutch, Michael</creatorcontrib><title>DEVICES COMPRISING CRYSTALLINE MATERIALS AND RELATED SYSTEMS</title><description>A method includes forming a semiconductor structure. The structure includes a first material, a blocking material, a second material in an amorphous form, and a third material in an amorphous form. The blocking material is disposed between the first material and the second material. At least the second material and the third material each comprise silicon and/or germanium. The structure is exposed to a temperature above a crystallization temperature of the third material and below a crystallization temperature of the second material. Semiconductor structures, memory devices, and systems are also disclosed.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLBxcQ3zdHYNVnD29w0I8gz29HNXcA6KDA5x9PHx9HNV8HUMcQ3ydPQJVnD0c1EIcvUB8l0UgoEKXH2DeRhY0xJzilN5oTQ3g7Kba4izh25qQX58anFBYnJqXmpJfGiwkYGRgbGBsYmlsaOhMXGqANAJKsE</recordid><startdate>20200924</startdate><enddate>20200924</enddate><creator>Nahar, Manuj</creator><creator>Kinney, Wayne I</creator><creator>Mutch, Michael</creator><scope>EVB</scope></search><sort><creationdate>20200924</creationdate><title>DEVICES COMPRISING CRYSTALLINE MATERIALS AND RELATED SYSTEMS</title><author>Nahar, Manuj ; Kinney, Wayne I ; Mutch, Michael</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2020303493A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2020</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Nahar, Manuj</creatorcontrib><creatorcontrib>Kinney, Wayne I</creatorcontrib><creatorcontrib>Mutch, Michael</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Nahar, Manuj</au><au>Kinney, Wayne I</au><au>Mutch, Michael</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>DEVICES COMPRISING CRYSTALLINE MATERIALS AND RELATED SYSTEMS</title><date>2020-09-24</date><risdate>2020</risdate><abstract>A method includes forming a semiconductor structure. The structure includes a first material, a blocking material, a second material in an amorphous form, and a third material in an amorphous form. The blocking material is disposed between the first material and the second material. At least the second material and the third material each comprise silicon and/or germanium. The structure is exposed to a temperature above a crystallization temperature of the third material and below a crystallization temperature of the second material. Semiconductor structures, memory devices, and systems are also disclosed.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US2020303493A1
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title DEVICES COMPRISING CRYSTALLINE MATERIALS AND RELATED SYSTEMS
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-18T05%3A28%3A50IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Nahar,%20Manuj&rft.date=2020-09-24&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2020303493A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true