PROTECTION OF PHOTOMASKS FROM 193nm RADIATION DAMAGE USING THIN COATINGS OF ALD Al2O3

The invention relates to a method used in a photolithographic process comprising depositing a film of Atomic layered Deposition (ALD) Al2O3 on a photomask, subjecting said film of Al2O3 on the photomask to a plasma treatment and then irradiating the deposited film of ALD Al2O3 on the coated photomas...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Faure, Thomas B, Guha, Supratik, Bartlau, Peter H, Wagner, Alfred, Sandstrom, Robert L, Kiewra, Edward W, Kindt, Louis M
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:The invention relates to a method used in a photolithographic process comprising depositing a film of Atomic layered Deposition (ALD) Al2O3 on a photomask, subjecting said film of Al2O3 on the photomask to a plasma treatment and then irradiating the deposited film of ALD Al2O3 on the coated photomask at a wavelength of 193 nm.