MANGANESE-DOPED InZnP QUANTUM DOT AND MANUFACTURING METHOD THEREOF

MANGANESE-DOPED InZnP QUANTUM DOT AND MANUFACTURING METHOD THEREOF

The present disclosure provides a manganese-doped InZnP quantum dot having high reproducibility and exhibiting superior optical efficiency, and a method of manufacturing the quantum dot. According to an aspect of an exemplary embodiment, the manganese-doped InZnP quantum dot is of manufactured by sy...

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Bibliographische Detailangaben
Hauptverfasser: PARK, Kyoungwon, KIM, Jiyong, HAN, Chuljong
Format: Patent
Sprache:eng
Schlagworte:
ADHESIVES
CHEMISTRY
DYES
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
POLISHES
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Beschreibung
Zusammenfassung:The present disclosure provides a manganese-doped InZnP quantum dot having high reproducibility and exhibiting superior optical efficiency, and a method of manufacturing the quantum dot. According to an aspect of an exemplary embodiment, the manganese-doped InZnP quantum dot is of manufactured by synthesizing an InZnP quantum dot by reacting indium acetate, zinc acetate, and tris(trimethylsilyl)phosphine; and then doping the InZnP quantum dot with manganese.