Method and Device for Electrical Overstress and Electrostatic Discharge Protection

Method and Device for Electrical Overstress and Electrostatic Discharge Protection

A semiconductor device is protected from electrical overstress (EOS) and electro-static discharge (ESD) events by a series protection circuit electrically coupled in series along the transmission line between a signal source and a load. The series protection circuit includes a first field-effect tra...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Rose, David J, Russell, William A, Clark, Jonathan
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
GENERATION
RESISTORS
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor device is protected from electrical overstress (EOS) and electro-static discharge (ESD) events by a series protection circuit electrically coupled in series along the transmission line between a signal source and a load. The series protection circuit includes a first field-effect transistor (FET) electrically coupled in series between the signal source and load. A parallel protection circuit is electrically coupled between the transmission line and a ground node. The parallel protection circuit can include a transient-voltage-suppression (TVS) diode.