CONDUCTOR ETCHING FOR PRODUCING THIN-FILM TRANSISTOR DEVICES

Method for forming an organic polymer insulator over a first conductor pattern defining a first level of conductors for a thin-film transistor device. A first conductor layer is formed over the organic polymer insulator and a second conductor layer formed over the first conductor layer. The second conductor layer is patterned to define a second level of conductors by exposing the second conductor layer to liquid etchant in selected regions to form a second conductor pattern. The first conductor layer may be located in the selected regions and the first conductor layer and the organic polymer insulator may comprise surface materials that exhibit a substantially zero etch rate for the liquid etchant. The first conductor layer may be less permeable to the liquid etchant than the organic polymer insulator and/or more resistant to damage by the liquid etchant than the organic polymer insulator may be patterned.