GATE STRUCTURE OF SPLIT-GATE METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF

GATE STRUCTURE OF SPLIT-GATE METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF

A gate structure of split-gate MOSFET includes a substrate, an epitaxial layer, a first gate, a second gate, a bottom dielectric layer between the first gate and the epitaxial layer, a gate dielectric layer between the second gate and the epitaxial layer, and an inter-gate dielectric layer between t...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Su, Jiong-Guang, Chou, Hung-Wen, Chen, Shao-Hua
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A gate structure of split-gate MOSFET includes a substrate, an epitaxial layer, a first gate, a second gate, a bottom dielectric layer between the first gate and the epitaxial layer, a gate dielectric layer between the second gate and the epitaxial layer, and an inter-gate dielectric layer between the first and second gates. The epitaxial layer is on the substrate having first and second trenches with different extending directions, wherein the first trench and the second trench have an overlapping region. The width of the first trench is greater than that of the second trench. The depth of the first trench is greater than that of the second trench. The first gate is in the first trench. The second gate is in the first trench on the first gate and in the second trenches.