ETCHING SOLUTION FOR SILICON SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
Disclosed is an etching solution for a silicon substrate. More specifically, an etching solution for a silicon substrate is disclosed in which a concentration of a silane compound (silicon) in the etching solution for the silicon substrate is adjusted to improve an etching selectivity of a silicon n...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | Disclosed is an etching solution for a silicon substrate. More specifically, an etching solution for a silicon substrate is disclosed in which a concentration of a silane compound (silicon) in the etching solution for the silicon substrate is adjusted to improve an etching selectivity of a silicon nitride film relative to a silicon oxide film during etching of the nitride film. |
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