METHOD OF FORMING MASK PATTERN AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING THE SAME

A method of forming a mask pattern and a method of fabricating a semiconductor device, the method of forming a mask pattern including providing a substrate including a plurality of patterns thereon; forming a mask material solution layer such that the mask material solution layer covers the patterns...

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Bibliographische Detailangaben
Hauptverfasser: KIM, Chul-Ho, CHOI, Jinphil, KANG, Yool, KANG, Jaesung
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A method of forming a mask pattern and a method of fabricating a semiconductor device, the method of forming a mask pattern including providing a substrate including a plurality of patterns thereon; forming a mask material solution layer such that the mask material solution layer covers the patterns on the substrate; and applying a liquid material to remove an upper portion of the mask material solution layer, wherein the mask material solution layer includes a fluorine additive concentrated at the upper portion of the mask material solution layer.