SEMICONDUCTOR DEVICE
The present technology relates to a semiconductor device that makes it possible to enhance a heat dissipation capacity without occurrence of a fluctuation in high frequency characteristics. A glass substrate is adhered to a wiring layer-attached glass substrate, and a heat dissipation part is formed...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | The present technology relates to a semiconductor device that makes it possible to enhance a heat dissipation capacity without occurrence of a fluctuation in high frequency characteristics. A glass substrate is adhered to a wiring layer-attached glass substrate, and a heat dissipation part is formed between the wiring layer-attached glass substrate and the glass substrate. The present disclosure is applicable to, for example, a high-frequency module and a high-speed communication module. |
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