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An active side slit and an FPC side slit each extend through a second inorganic insulating film and reach a first inorganic insulating film. The active side slit is formed between an active region and an IC chip mounted region of an EL device in plan view and also, the IC chip mounted region is sand...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | An active side slit and an FPC side slit each extend through a second inorganic insulating film and reach a first inorganic insulating film. The active side slit is formed between an active region and an IC chip mounted region of an EL device in plan view and also, the IC chip mounted region is sandwiched between the active side slit and the FPC side slit. |
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