NONVOLATILE MEMORY DEVICES COMPRISING A CONDUCTIVE LINE COMPRISING PORTIONS HAVING DIFFERENT PROFILES AND METHODS OF FABRICATING THE SAME

NONVOLATILE MEMORY DEVICES COMPRISING A CONDUCTIVE LINE COMPRISING PORTIONS HAVING DIFFERENT PROFILES AND METHODS OF FABRICATING THE SAME

Nonvolatile memory devices and methods of fabricating the nonvolatile memory devices are provided. The nonvolatile memory devices may include a stacked structure including a plurality of conductive films and a plurality of interlayer insulating films stacked in an alternate sequence on a substrate a...

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Bibliographische Detailangaben
Hauptverfasser: Ha, Dong Hyeop, Park, Sungjin, Kang, Yu Seon, Im, Jiwoon, Seo, Jiyoun, Lim, Hyunseok, Kwon, Hyukho, EOM, Taeyong, Park, Byungsun
Format: Patent
Sprache:eng
Schlagworte:
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Beschreibung
Zusammenfassung:Nonvolatile memory devices and methods of fabricating the nonvolatile memory devices are provided. The nonvolatile memory devices may include a stacked structure including a plurality of conductive films and a plurality of interlayer insulating films stacked in an alternate sequence on a substrate and a vertical channel structure extending through the stacked structure. The plurality of conductive films may include a selection line that is closest to the substrate among the plurality of conductive films. The selection line may include a lower portion and an upper portion sequentially stacked on the substrate, and a side of the upper portion of the selection line and a side of the lower portion of the selection line may have different profiles.