METHOD OF DOUBLE-SIDE POLISHING SILICON WAFER

METHOD OF DOUBLE-SIDE POLISHING SILICON WAFER

Provided is a method of double-side polishing a silicon wafer using a double-side polishing apparatus, the method including in succession: a first polishing step of performing double-side polishing while supplying a first polishing agent that is an alkaline aqueous solution containing abrasive grain...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: YAMAZAKI, Ichiro, TANIMOTO, Ryuichi, MIKURIYA, Shunsuke
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
DRESSING OR CONDITIONING OF ABRADING SURFACES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
GRINDING
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
PERFORMING OPERATIONS
POLISHING
SEMICONDUCTOR DEVICES
TRANSPORTING
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Beschreibung
Zusammenfassung:Provided is a method of double-side polishing a silicon wafer using a double-side polishing apparatus, the method including in succession: a first polishing step of performing double-side polishing while supplying a first polishing agent that is an alkaline aqueous solution containing abrasive grains to the polishing cloths; a polishing agent switching step of stopping the supply of the first polishing agent and starting the supply of a second polishing agent that is an alkaline aqueous solution containing a water-soluble polymer with no abrasive grains, with the polishing cloths of the upper plate and the lower plate being in contact with the front surface and the back surface of the silicon wafer, respectively and with the upper plate and the lower plate being continuously rotated; and a second polishing step of performing double-side polishing while supplying the second polishing agent to the polishing cloths.