THROUGH-SUBSTRATE VIA STRUCTURES IN SEMICONDUCTOR DEVICES

A semiconductor device is provided that includes a substrate, an integrated circuit with a conductive member and a through-substrate-via (TSV) structure. The substrate includes a front surface and a back surface that is opposite the front surface. The integrated circuit with the conductive member is formed over the front surface of the substrate. The TSV structure having vertical sidewalls is formed in the back surface of the substrate connecting with the conductive member. The TSV structure includes a tapered first insulation layer, a conformal conductive layer and a second insulation layer, with the conformal conductive layer positioned between the first and second insulation layers. The conformal conductive layer is electrically connected to the conductive member.