SEMICONDUCTOR STRUCTURE HAVING INTEGRATED INDUCTOR THEREIN

A semiconductor structure includes: a substrate; a first passivation layer over the substrate; a second passivation layer over the first passivation layer; and a magnetic core in the second passivation layer; wherein the magnetic core includes a first magnetic material layer and a second magnetic ma...

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Bibliographische Detailangaben
Hauptverfasser: CHEN, I-NAN, CHEN, SHENGAU, TSAI, CHENG-YUAN, LEE, MING, CHOU, CHENG-HSIEN
Format: Patent
Sprache:eng
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Zusammenfassung:A semiconductor structure includes: a substrate; a first passivation layer over the substrate; a second passivation layer over the first passivation layer; and a magnetic core in the second passivation layer; wherein the magnetic core includes a first magnetic material layer and a second magnetic material layer over the first magnetic material layer, the first magnetic material layer and the second magnetic material layer are separated by a high resistance isolation layer, and the high resistance isolation layer has a resistivity greater than about 1.3 ohm-cm.