IMAGE SENSOR WITH PAD STRUCTURE

The present disclosure relates to an image sensor with a pad structure formed during a front-end-of-line process. The pad structure can be formed prior to formation of back side deep trench isolation structures and metal grid structures. An opening is formed on a back side of the image sensor device...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	HUANG, Yin-Chieh, HUANG, Hsun-Ying, CHENG, Yun-Wei, LEE, Kuo-Cheng, CHOU, Chun-Hao
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	The present disclosure relates to an image sensor with a pad structure formed during a front-end-of-line process. The pad structure can be formed prior to formation of back side deep trench isolation structures and metal grid structures. An opening is formed on a back side of the image sensor device to expose the embedded pad structure and to form electrical connections.