SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR FORMING A PROFILE OF A CAPACITOR THEREOF

A method for forming a capacitor profile on a semiconductor is disclosed. The method includes: providing a semiconductor substrate; forming a dielectric layer on the semiconductor substrate; forming an ion reflecting mask layer on the dielectric layer; forming a plurality of patterned openings by etching through the ion reflecting mask layer to expose the dielectric layer; and forming a plurality of trenching capacitor profiles by etching through the dielectric layer from the plurality of patterned openings, respectively, to expose the semiconductor substrate. Each trenching capacitor profile includes a bowing profile formed at 75%-95% of a height of the trenching capacitor profile above the semiconductor substrate.