LDMOS DEVICE WITH A DRAIN CONTACT STRUCTURE WITH REDUCED SIZE

LDMOS DEVICE WITH A DRAIN CONTACT STRUCTURE WITH REDUCED SIZE

An LDMOS device with a plurality of drain contact structures. Each drain contact structure has a drain contact, a first drain contact metal layer and a via. The drain contact is positioned above a drain region. The first drain contact metal layer is positioned above the drain contact. The via is pos...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Braun, Eric, Jung, Jeesung, McGregor, Joel
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:An LDMOS device with a plurality of drain contact structures. Each drain contact structure has a drain contact, a first drain contact metal layer and a via. The drain contact is positioned above a drain region. The first drain contact metal layer is positioned above the drain contact. The via is positioned above the first drain contact metal layer. The LDMOS device has a second drain contact metal layer conductively coupled to the via of each drain contact structure.