MANUFACTURING METHOD OF STATIC RANDOM ACCESS MEMORY CELL

A method for manufacturing a SRAM cell includes forming a first p-well in a semiconductor substrate; forming a first semiconductor fin extending within the first p-well; forming a first mask layer over the first semiconductor fin; patterning the first mask layer to expose a first channel region of t...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	HSU, Jordan, LU, Shau-Wei, YANG, Chang-Ta, WANG, Ping-Wei, LO, Kuo-Hung, LIN, Yu-Kuan
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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