MANUFACTURING METHOD OF STATIC RANDOM ACCESS MEMORY CELL

MANUFACTURING METHOD OF STATIC RANDOM ACCESS MEMORY CELL

A method for manufacturing a SRAM cell includes forming a first p-well in a semiconductor substrate; forming a first semiconductor fin extending within the first p-well; forming a first mask layer over the first semiconductor fin; patterning the first mask layer to expose a first channel region of t...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: HSU, Jordan, LU, Shau-Wei, YANG, Chang-Ta, WANG, Ping-Wei, LO, Kuo-Hung, LIN, Yu-Kuan
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method for manufacturing a SRAM cell includes forming a first p-well in a semiconductor substrate; forming a first semiconductor fin extending within the first p-well; forming a first mask layer over the first semiconductor fin; patterning the first mask layer to expose a first channel region of the first semiconductor fin, while leaving a second channel region of the first semiconductor fin covered by the first mask layer; with the patterned first mask layer in place, doping the first channel region of the first semiconductor fin with a first dopant; after doping the first channel region of the first semiconductor fin, removing the first mask layer from the second channel region; and forming a first gate structure extending across the first channel region of the first semiconductor fin and a second gate structure extending across the second channel region of the first semiconductor fin.