METHODS FOR MANUFACTURING SEMICONDUCTOR DEVICES

A method for manufacturing a semiconductor device includes performing a first ion implantation process on a substrate to form a lower dopant region in the substrate, patterning the substrate having the lower dopant region to form active patterns, and performing a second ion implantation process on t...

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Bibliographische Detailangaben
Hauptverfasser: Lee, Jung Han, Kim, Byoung-gi, Lee, Kihwan, Kim, Jong Pil
Format: Patent
Sprache:eng
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Zusammenfassung:A method for manufacturing a semiconductor device includes performing a first ion implantation process on a substrate to form a lower dopant region in the substrate, patterning the substrate having the lower dopant region to form active patterns, and performing a second ion implantation process on the active patterns to form an upper dopant region in an upper portion of each of the active patterns. The lower and upper dopant regions have a same conductivity type.