SEMICONDUCTOR DEVICES INCLUDING A NARROW ACTIVE PATTERN

SEMICONDUCTOR DEVICES INCLUDING A NARROW ACTIVE PATTERN

Semiconductor devices are provided. A semiconductor device includes a gate structure extending in a first direction. The semiconductor device includes an active pattern intersecting the gate structure and having a width in the first direction and a height in a second direction. The width is smaller...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Cho, Keun Hwi, Park, Byung Gook, Kim, Si Hyun, Lee, Ki Tae, Kim, Mun Hyeon
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Semiconductor devices are provided. A semiconductor device includes a gate structure extending in a first direction. The semiconductor device includes an active pattern intersecting the gate structure and having a width in the first direction and a height in a second direction. The width is smaller than the height. Moreover, the semiconductor device includes a source/drain region electrically connected to the active pattern.